Abstract
This paper describes a study, employing angular resolved X-ray photoelectron spectroscopy (ARXPS) and low energy ion scattering spectroscopy (LEISS), of the (100) surface of GeSi subject to Ar ion bombardment. Examination of the GeSi surface prior to bombardment showed the dominant oxide to be SiO 2. Standard XPS measurements on the bombarded surface showed a maximum Si/Ge atomic ratio increased value of 1.23. ARXPS analysis, however, showed Ge enrichment in the outer layers, and this was confirmed by LEISS with a measured Si/Ge ratio of 0.65 in the outermost layer. Combining the data obtained from ARXPS and LEISS the results may be explained in terms of bombardment induced segregation.
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