Abstract
SF6/O2 Plasma cryo-etching is discussed to show that it is a promising technology for etching the high aspect ratio silicon structures. Through a series of etching experiments, process factors including chuck temperature, gas composition, chamber pressure and ICP coil power are variated to show their influences to the etching results. Some valuable details of the experiment data point to some key mechanisms of the cryo-etching. It is not the surface chemical reaction but the ion bombardment that dominates the cyro-etching process in most cases. Notching near to the mask is due to the discharging effects of dielectric layer, and ARDE effect here is also different from the usual etching processes but is driven by the sidewall step coverage effect to the ion sputtering.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
