Abstract
ABSTRACTIon beam analysis techniques have become very useful for characterization of low k materials. Studies on several ion beam analysis techniques will be discussed. Rutherford Backscattering Spectrometry (RBS) provides a very powerful analytical technique for the thickness and porosity measurements on porous Si0 2 films. Nuclear Reaction Analysis (NRA) techniques for hydrogen and fluorine profiling are very useful to characterize fluorinated polymer and fluorinated oxide films. Examples of low k materials including Si02:F, Parylene-AF and Teflon-AF will be discussed. Fluorine diffusion in to metals and various interface effects between metal and low k materials will be presented.
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