Ion beam synthesis of TiSi 2 in (100) Si and (111) Si

Abstract

Ion beam synthesis of TiSi 2 in (100)Si and (111)Si has been investigated. The formation of a Ti silicide layer was found to depend on the substrate orientation and implantation dose. Both are correlated to the Ti ion implantation profiles. The concentration peaks of implanted metal atoms are expected to be lower and broader in (100) samples than those in (111) samples, since (111) is the closest packed plane of Si. For high-dose implantation (> 1.0×10 17 cm −2), the peaks of the profiles shift significantly towards the surface with the dose. It was revealed that the formation of TiSi 2 depends on the concentration of Ti in silicon. TiSi 2 formed first at the peak of the Ti concentration profile.