Abstract
We report the conversion of a 65nm Si(111) overlayer of a SIMOX(111) into 30–45nm SiC by 40keV carbon implantation into it. High temperature implantation (600°C) through a SiO2 cap, 1250°C post-implantation annealing under Ar ambient (with 1% of O2), and etching are the base for the present synthesis. Sequential C implantations (fluence steps of about 5×1016cm−2), followed by 1250°C annealing, has allowed to estimate the minimum C fluence to reach the stoichiometric composition as ∼2.3× 1017cm−2. Rutherford Backscattering Spectrometry was employed to measure layer composition evolution. A two-sublayers structure is observed in the synthesized SiC, being the superficial one richer in Si. Transmission electron microscopy has shown that a single-step implantation up to the same minimum fluence results in better structural quality. For a much higher C fluence (4×1017cm−2), a whole stoichiometric layer is obtained, with reduction of structural quality.
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