Abstract
The formation of nanodimensional InAs crystallites on Si wafers was studied by the method of high-fluence implantation of As and In ions with subsequent high-temperature treatment. It was found that the size and depth distributions of the crystallites depend on both the implantation temperature and the annealing conditions. A broad band in an energy range of 0.75–1.1 eV was recorded in the photoluminescence spectra of the samples.
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