Abstract
Different types of porous Si layers several μm thick were implanted with 170 keV Cr + ions to fluences of 3×10 17 ions/cm 2 both at RT and 450°C and then annealed (700°C 90 min + 1000C° 15 min). The porous structure collapsed into a compact one as it was proved by the O resonance method (Pászti et al., 1998 [1]). The formed silicide compounds were studied by Rutherford Backscattering Spectrometry (RBS), Glancing Incidence X-ray Diffraction (GIXRD) and four point probe resistivity measurements. According to resonant RBS and Elastic Recoil Detection (ERD)-measurements, the light impurities were partially expelled from the forming silicide layer. The resistivity, in spite of the remaining high impurity level, is surprisingly low. The quality of the formed silicide layer depends on the original impurity level as well as on the implantation temperature and annealing.
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