Abstract
Buried layers of both the semiconducting β phase and the metallic α phase of iron disilicide have been produced by ion beam synthesis in silicon. The structure and properties of the layers before and after annealing was followed by Rutherford backscattering spectroscopy (RBS), cross-sectional transmission electron microscopy (XTEM), photoluminescence (PL) and sheet resistance measurements. A PL peak at 1.54 μm (0.81 eV) with a full width half maximum (FWHM) value of 3 meV was obtained after a 900°C anneal for 18 h. Optical absorption measurements indicated a room temperature bandgap of 0.87–0.89 eV. Annealing at 1000°C for l h produced the metallic α phase with a resistivity of 270 μΩ cm.
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