Ion beam synthesis and charge storage behavior of Au nanocrystals in thin SiO2 layers

Abstract

Au nanocrystals (NCs) were synthesized in a thin SiO2 layer by ion implantation and annealing in a tight distribution close to the Si/SiO2 interface. Between the NCs and the Si substrate a thin tunneling oxide forms self-organized during annealing totally depleted from Au NCs. Memory behavior is demonstrated by electron charging and discharging on metal–oxide–semiconductor capacitors. Lenticular liquid Au:Si droplets nucleate at the Si/SiO2 interface from silicon regions supersaturated by Au close to the oxide. Au NCs embedded in SiO2 above these droplets are stabilized during annealing due to a modified detailed balance of Au atom detachment and attachment. Capacitance-voltage and spreading resistance measurements reveal the impact of the Au contamination in the Si substrate. Structure and distribution of Au droplets and NCs are characterized by x-ray diffraction and transmission electron microscopy.