Ion beam studies of TiN xO y thin films deposited by reactive magnetron sputtering

Abstract

Titanium oxynitride compounds exhibit interesting properties for applications in fields ranging from protective/decorative coatings to solar panels. The properties of TiN x O y are related to the oxide/nitride ratio and can be tailored playing with this ratio. In this work we studied the influence of substrate bias voltage and flow rate of reactive gases (a mixture of N 2 and O 2) on the properties of TiN x O y films. The films were deposited on steel substrates at a constant temperature of 300 °C by r.f. reactive magnetron sputtering. The depositions were carried out from a pure Ti target. The composition throughout the entire thickness was determined by Rutherford backscattering spectrometry. To obtain information on the profile of light elements (O, N) and detect the presence of hydrogen on the films, heavy ion elastic recoil detection analysis was performed. The results indicate a nearly constant stoichiometry through the entire analysed depth. The colouration varied from the shiny golden for low oxygen contents (characteristic of TiN films) to dark blue for higher oxygen contents. The electrical resistivity of the samples was obtained at room temperature and the values varied from approximately 120 μΩ cm for a sample with very low oxygen content to values up to 350 μΩ cm, for the highest oxygen contents.