Abstract
The influence of low-energy argon bombardment with an ion energy of 30–70 eV and normal incidence on the morphology of a 15-nm-thick Ni 81Fe 19 film on SiO 2 has been studied at room temperature. Scanning tunneling microscope measurements show a reduction of the root-mean-square roughness of over 40%. For magnetic tunnel junctions prepared by involving ion-beam smoothing process, the Néel coupling is substantially reduced and measured by magneto-optic Kerr magnetometry.
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