Abstract

A study of ion sculpting dynamics in SiO2 and SiN using periodically pulsed ion beams reveals material transport that depends strongly on the time structure of the pulsed beams. It is found that significant nanoscale matter transport can occur over second long time scales after the ion beam has been extinguished. A simple phenomenological model described the dynamics of ion beam sculpting in terms of two material time scales. The model accounts for the surprising observation of enhanced matter transport affected by pulsed ion beams over continuous ion beam exposure.

Highlights

  • It is found that significant nanoscale matter transport can occur over second long time scales after the ion beam has been extinguished

  • A simple phenomenological model described the dynamics of ion beam sculpting in terms of two material time scales

  • We recently reported on how low-energy ion beams can be used to fashion nanometer sized holes, or ‘‘nanopores,’’ in silicon nitride membranes [12]

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Summary

Introduction

A study of ion sculpting dynamics in SiO2 and SiN using periodically pulsed ion beams reveals material transport that depends strongly on the time structure of the pulsed beams. We describe experiments using periodically pulsed ion beams that directly probe the time scales for materials transport on ion sculpted silicon dioxide and silicon nitride.

Results
Conclusion

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