Abstract
ABSTRACTIon-beam mixing studies were performed with arsenic implantation up to a dose of 1015/ cm2 through Ti on n+-Si contacts. Lateral silicide growth of many microns over the contact edges was observed for furnace annealed samples. The lateral growth is greatly enhanced by ion-beam mixing and can be suppressed with silicon nitride capping or using rapid thermal annealing (RTA) with a flash-lamp system. For RTA annealed samples. the implanted arsenic profile measured by RBS showed no snowplowing during the silicide growth process. Hligh contact resistivity was measured in the high-temperature annealed samples. This observation is consistent with the lower dopant concentration at the silicide/Si interface, due to silicide growth consuming the n+-Si layer.
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