Abstract
Silicon and tin multilayers of total thickness 200 nm have been deposited at room temperature on beryllium and glass plate substrates under high vacuum (<5. 10−7 mbar). The average atomic tin fraction of the whole layer varied from 0.12 to 0.60. The samples were irradiated at room temperature with Xe+ ions of 900 keV energy with fluences of 1.1015 to 2.1016 ions. cm−2.
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