Abstract
Samples consisting of thin Fe film (40 nm) deposited on (100) Si substrate were irradiated at different temperatures with a Xe + beam (0.2−2.0 × 10 16 cm −2 at 380 keV) and analysed by Rutherford backscattering spectrometry (RBS) and conversion electron Mössbauer spectrometry (CEMS). The intermixing was found to be controlled by cascade mixing when performed at temperatures below ⋍160°C and by radiation enhanced diffusion (RED) at higher temperatures. A combination of Fe 3Si, FeSi and β-FeSi 2 phases composes the intermixed layer, being the latter phase the predominant compound product, for T ≤ 300°C. When Xe + irradiation is conducted at 400°C the α-FeSi 2 phase is additionally formed. In this case the most abundant phases are Fe 3Si and FeSi.
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