Ion beam-mixing effects in nearly lattice-matched AlInN/GaN heterostructures by swift heavy ion irradiation

Abstract

Ion beam-induced intermixing is of great interest and has been observed in various systems such as metal–semiconductor interfaces. However, similar effects in III-nitrides have not been studied in any detail, yet. In the present study, swift heavy ion-induced intermixing of nearly lattice-matched Al(1−x) In x N/GaN heterostructures have been investigated using Rutherford backscattering spectrometry and high-resolution X-ray diffraction techniques. Inter-diffusion of Ga and In elements across the Al(1−x) In x N/GaN interface and the consequent formation of a new mixed quaternary alloy (AlGaInN) layer have been observed. The influence of electronic energy loss of SHI on intermixing effects has been studied.