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Abstract
Atomic mixing at Cr-SiO2 interfaces induced by noble gas (Ar, Kr and Xe) ion bombardment was studied by means of Rutherford backscattering spectrometry. The amount of mixing was determined as a function of fluence (1-20*1015 ions cm-2), substrate temperature (300-800 K) and deposited energy at the interface. These results indicate the prevalence of the ballistic mixing mechanism.
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