Abstract
The energy deposited in resist during its exposure by ion beam was simulated for ions from a set of rare gases and for gallium. It was shown that the distribution of energy density can be approximated by the product of two Gaussian functions. One of them describes the lateral distribution of energy, the second the dependence on depth. The widths and centres of these Gaussian functions are determined by the energy length (also mentioned in the literature as "Range" or "mean length of trajectories"), the mass of ions and the average atomic number of resist. The obtained description would make it possible to estimate the size of the resist modified volume for any type of ion with energy of tens keV. So it can be used for a priori estimates of resolution and performance, as well as for the choice of beam energy and ion type based on this. Keywords: lithography, nanostructuring, ion beam, resist, modeling, deposited energy.
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