Abstract
Ion-beam-induced modification of InSb (0 0 1) semiconductor surface has been studied by means of atomic force microscopy and Kelvin probe force microscopy. It was found that non-stoichiometric sputtering of the compound surface and beam enhanced surface diffusion led to unusual development of surface structures in the form of dots and wires with nanometer scale dimensions. The shape, the size and the surface density of nanostructures were investigated as a function of the beam flux and fluence, and as a function of the crystal orientation with respect to the ion-beam direction. The mechanisms involved in the surface modification were compared with results of Monte-Carlo computer simulations of anisotropic surface diffusion.
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