Abstract
The ion-beam-induced reaction of metal films on a silicon substrates is studied with emphasis on applications in very-large-scale integration processing. Using the Ti/Si system as an example it is shown that, in combination with subsequent rapid thermal annealing, silicides with excellent properties are formed in a uniform and reproducible way. When using dopant elements for the mixing, shallow junctions with a depth of the order of 0.1 μm are demonstrated, which show excellent electrical properties. The advantages of the ion-beam-induced metal-silicon reaction in a self-aligned silicide process are discussed.
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