Abstract
Ion beam induced mixing of Al-Ni has been studied using N 2 + and Ar+ bombardment. High dose (4×1017 ions cm−2) nitrogen bombardment was found to cause blister formation with no unambiguous evidence of mixing. However, using argon ions at elevated substrate temperatures (400–450 °C) led to extensive mixing of 2000 A Al layers on Ni. The mixing mechanism is considered to be point defect mediated radiation enhanced diffusion with a possible contribution from cascade mixing and interfacial oxide layer breakdown during the initial stages of treatment.
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