Abstract
We used ion beam induced luminescence (IBIL) to study the evolution of damage during ion implantation of natural type-IIa diamond with 30 keV carbon ions, for different sample temperatures in the range 35–300 K. Blue band-A luminescence decays with irradiation dose from an initial value of ∼10−3 photons/e-h pair. This decay was modeled to obtain an effective damage cross section of ∼40 Å2, which is roughly independent of temperature. We explored the use of IBIL as a tool to characterize the processing of p-n junctions in natural type-IIb diamond and apply it to find conditions that determine the ultraviolet response of light-emitting diodes.
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