Ion-beam induced epitaxy of silicon

Abstract

Epitaxial regrowth of an amorphous Si layer on a 〈100〉 Si crystal held at 200–400°C is achieved under bombardment with Si, Kr, or Xe ions. Channeling measurements with MeV He ions show the regrowth proceeds from the amorphous-crystalline interface, and has an initially linear dose dependence. The annealing beam, however, introduces additional damage centered at or beyond the ion range. Amorphous layers obtained by low-temperature self-ion bombardment regrow much more readily than amorphous deposited layers.