Abstract
The epitaxial recrystallization of an amorphous Al 2O 3 layer, formed by In ion implantation, on a crystalline substrate has been induced by high energy Si ion irradiation at a temperature as low as 400°C. At such a temperature, the rate of thermally induced recrystallization is negligible. The extent of crystallization of an amorphous layer and the redistribution of In atoms during ion beam induced epitaxial crystallization (IBIEC) have been compared with thermal annealing behaviour at 700°C. The most striking difference between the two annealing regimes are that IBIEC at low temperatures results in (1) more extensive epitaxy which is insensitive to the presence of In, and (2) negligible In redistribution.
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