Abstract
Epitaxial crystallization of deposited amorphous GaAs layers on GaAs(100) up to the surface by bombardments with 400 keV Ar and 400 keV Kr has been successfully performed at a temperature range between 125 and 200°C. Properties of crystal growth were investigated as a function of ion species (Ar and Kr), energy (400 and 800 keV), ion dose, dose rate and substrate temperature by RBS channeling experiments. The growth rate has shown a nearly linear dependence on ion fluence. Ion bombardments below 100°C have induced further amorphization beyond the initial crystal/amorphous interface. On the scale of nuclear energy deposition density, bombardments with higher electronic excitation efficiency give a small increase of the growth rate. Ar bombardments have shown a strong dependence of the growth rate on dose rate, whereas Kr bombardments have revealed a weak dependence. An apparent activation energy of 0.13 ± 0.06 eV for the crystal growth was observed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
