Ion-beam-induced epitaxial crystallisation of metastable Si 1− x−yGe xC y layers fabricated by Ge and C ion implantation

Abstract

Formation of metastable Si 1− x−y Ge x C y layers ( x = 0.13 and y = 0.014 at peak concentration) on Si(100) has been performed by high-dose implantation of 80 keV Ge and 17 keV C ions and subsequent ion-beam-induced epitaxial crystallisation (IBIEC) with 400 keV Ar or Ge ion bombardments at 300–400°C. Their structural properties are compared with those of Si 1− x−y Ge x C y layers grown by solid phase epitaxial growth (SPEG) up to 700°C. Crystalline growth by IBIEC has shown a larger growth rate in Si 1−x−y Ge x C y Si than in Si 1−x Ge x Si with the same Ge concentration for all bombardments under investigation. Depth profiles of implanted atoms observed by SIMS measurements have revealed almost the same profiles for Ge and C atoms after IBIEC process. X-ray rocking curve measurements have shown a strain-compensated growth of Si 1−x−y Ge x C y Si by IBIEC, whereas it has been suggested that Si 1−x−y Ge x C y Si layers crystallised by SPEG have both compressive and tensile strains.