Abstract
We report here the response of in situ formed Si-nanostructures embedded in Si-rich hydrogenated amorphous silicon nitride matrix to 100MeV Ni8+ ions irradiation under normal incidence at room temperature. Prior to irradiation, Si-nanostructures are amorphous in nature having partial crystallinity. Irradiation with a fluence of 5×1012ions/cm2 leads to dissolution of Si-nanostructures. Nevertheless, irradiation with a relatively higher fluence of 1×1014ions/cm2 enhances the nucleation and leads to the formation of amorphous Si-nanostructures. The results are understood on the basis of intense electronic energy loss induced hydrogen desorption and consequent rearrangement of the amorphous network under thermal spike formalism of ion–material interaction.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
