Abstract
We have investigated TiO2 films prepared by pulsed laser deposition method on Si(111) surface using X-ray diffraction (XRD), Raman Spectroscopy, X-ray Photoelectron Spectroscopy (XPS), Atomic Force Microscopy (AFM) and ion beam sputtering techniques. Our XRD data along with Raman indicated that the deposited TiO2 is in anatase phase. The binding energy position of Ti 2p also supports the anatase phase formation. AFM topography of as deposited film indicates the formation of non uniform TiO2 growth with the formation of voids on Si(111) substrate. After sputtering with argon ion beam, surface erosion occurs and voids have disappeared. The Ti 2p core level of sputtered TiO2 exhibits the formation of Ti2O3, TiO and pure Ti on the surface. High binding energy shoulder of O 1s peak becomes sharp after sputtering. Ti LMM Auger peaks become broader after sputtering but no shift in kinetic energy is observed.
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