Ion-beam-induced biomedical behavior of hexamethyldisiloxane films on deposited polyetherurethanes

Abstract

The influence of silicon ion implantation on hexamethyldisiloxane (HMDS) layers deposited on polyetherurethane (PEU) films was investigated. HMDS deposition onto PEU was performed using plasma chemical vapour deposition for a deposition time of 5 min, and then Si + ions were implanted into the HMDS layer at an energy of 80 keV with the dose ranging from 2×10 13 to 2×10 16 ions/cm 2 at room temperature. Studies of biomedical behavior indicated that the coagulation time was about three times greater after HMDS deposition and then Si + implantation with 2×10 15 ions/cm 2 relative to the pristine sample. At the same time, the anticalcific behavior and the wettability were also enhanced significantly after the surface treatment. X-ray photoelectron spectroscopy and electron spin resonance analysis demonstrated that ion implantation not only broke some chemical bonds on the surface, but also formed some new higher polar Si-containing groups and new radicals, which was probably the main reason for the surface modification.