Abstract
Abstract The redistribution of Germanium atoms previously implanted at 40 keV in Si was investigated after bombardment with various fluences (1015 −1017 cm−2) of 20 keV Ne+ ions- High resolution RBS was used for the depth analysis. The observed redistribution of the Germanium profile is discussed in terms of the Ne energy deposition distribution, and some preliminary theoretical estimates are given.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
