Abstract
High depth resolution Rutherford backscattering and channeling techniques have been used to investigate ion-implant-induced disorder in GaAs as a function of both implant dose and implant temperature. Our results indicate that considerable ion beam induced annealing occurs during implantation at room temperature and above and only at liquid nitrogen implant temperatures is all displacement damage “frozen in”. Subsequent furnace annealing indicates that disorder partially annealed during implantation is most difficult to completely remove below anneal temperatures of 870K. In contrast, amorphous layers produced by implantation at liquid nitrogen temperatures can be crystallised epitaxially at temperatures below 520 K.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
