Ion Beam Implantation Technology for Production of Thin Nanoporous Ge Layers Suited for Li-Ion Batteries

Abstract

In the industry for the development of rechargeable Li-ion battery electrodes, thin nanoporous Ge (PGe) layers as a promising material were increasingly considered. Various technological approaches were used to form PGe. Of particular interest is the effective clean technique for creating PGe layers on the monocrystalline or amorphous Ge substrates by high-dose ion implantation. This chapter presents a literature review for recent years on the synthesis of PGe layers formed by ion implantation. The summarized data on the parameters of implantation, such as acceleration energy, type of ion, dose, current density, matrix temperature, and annealing conditions, are presented. Additionally, recent original experiments on the creation of nanoporous Ge layers doped with various metal ions and nanoparticles by implantation of low-energy and high doses of ions are discussed. Changes in the morphology of implanted Ge surfaces were analyzed by scanning electron and atomic force microscopy. The near-surface layer of the samples was also studied using backscattered electron diffraction and energy-dispersive X-ray microanalysis. Thus, ion implantation is proposed, illustrated, and discussed to be applied to form thin layers of nanoporous semiconductors for the Li-ion battey anodes, which can be effectively integrated into a crystal Ge substrate for various applications.KeywordsLi-ion battery anodePorous GeGe nanowiresIon implantation