Abstract
An enhancement in surface smoothness during molecular beam epitaxial growth of Ge on Ge (001) by 200 eV Xe ion bombardment has been measured with reflection high-energy electron diffraction. We show that the steady-state surface is smoother during simultaneous ion bombardment and growth at 400 °C than during ion bombardment or growth alone. The smoothest surface is obtained when the rate of deposition is approximately equal to the rate of production of ion-induced surface defects. It is suggested that the smoothening is the consequence of the ion-induced vacancy-like defects annihilating with surface atoms and/or destabilizing small clusters.
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