Abstract
Double layers of metallic Ag/amorphous (a-)As2S3 on silica substrates were irradiated with 300 keV He+ ions to examine doping of Ag+ into a-As2S3 by dense electronic excitation. The irradiating ions passed through the double layers and came to rest in the silica substrates. Thus, energy deposition from energetic He+ ions into the double layers was completely almost due to electronic processes (99.4%). Ionized silver found to diffuse into a-As2S3 as a result of electronic excitation by ion-beam irradiation. Rutherford backscattering spectroscopy revealed that the highest concentration of silver doped into a-As2S3 was 35 at. %. When the resulting Ag-doped a-As2S3 was illuminated by band gap light, photo-surface-deposition of metallic silver particles, which was not observed for Ag photo-doped specimens, was observed.
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