Abstract
Ion beam deposition of crystallographically oriented nanocrystalline Si films from H 2SiH 4 gas plasma onto amorphous glass substrates is described. An X-ray diffraction investigation of the films of thickness between 0.2 and 15 μm was carried out. Si films deposited under special conditions are found to be nanocrystalline and the crystallite size varies between 25 and 50 nm; the films show a (220) preferred crystallographic orientation and a fiber texture.
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