Abstract
AbstractLoading 2D layered transition metal dichalcogenides (TMDs) on p‐type silicon photocathode is suitable for hydrogen production in solar‐driven photoelectrochemical (PEC) water splitting. Similarly, various nanostructured TMDs exposing more active sites are widely explored for improving the PEC performances of composite photoelectrodes. Here, defect engineering using a controllable argon ion beam bombardment is presented on ReS2/Si photocathode. The atomic vacancy defects are introduced on the 2D ReS2 to realize high‐density active sites, which significantly enhance the solar‐driven hydrogen evolution reaction performance of ReS2/Si photocathode. The highest photocurrent density of 18.5 mA cm−2 (at 0 V vs reversible hydrogen electrode) is achieved, under a simulated sun irradiation.
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