Abstract
The analysis of ion beam induced epitaxial crystallization (IBIEC) of SiC Si structures obtained by high dose C ion implantation into amorphous Si (preamorphized by Ge ion implantation) has been performed by FTIR, Raman scattering, TEM and RBS measurements. The data obtained show the formation of an amorphous SiC layer on the amorphous Si at successive Ge and C ion implantations in crystalline Si. During IBIEC processing, the Si amorphous region below the implanted layer recrystallizes epitaxially. However, in the carbon implanted layer polynucleation occurs, forming a nanocrystalline SiC layer. The epitaxial crystallization stops when the recrystallization front reaches the carbon implantation tail. Finally, Raman measurements show the presence of some residual amorphous phase, likely related to the surface and intergrain regions.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
