Abstract
Ion beam‐assisted etching of aluminum, in which an inert gas ion beam and a reactive gas are simultaneously applied to a substrate, was investigated for its fine line etching capability. As a result of the collimated nature of the ion beam, extremely high resolution, anisotropic etching of aluminum samples patterned with trilevel photoresist was demonstrated. Etch rates of 2000 Å/min were routinely achieved in this ion beam‐assisted etching mode. In addition, etching behavior as a function of ion energy, ion flux, and reactive gas intensity was also examined.
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