Abstract
Ion beam‐assisted etching of aluminum, in which an inert gas ion beam and a reactive gas are simultaneously applied to a substrate, was investigated for its fine line etching capability. As a result of the collimated nature of the ion beam, extremely high resolution, anisotropic etching of aluminum samples patterned with trilevel photoresist was demonstrated. Etch rates of 2000 Å/min were routinely achieved in this ion beam‐assisted etching mode. In addition, etching behavior as a function of ion energy, ion flux, and reactive gas intensity was also examined.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.