Abstract
Sputter deposition using a focused ion beam has been investigated as an alternative to magnetron sputtering for the deposition of thin-film gold electrodes onto quartz resonators. One potential concern is the inclusion of argon in the growing film when argon ions are used for sputtering. Argon retention in sputter-deposited gold films using an 11.5 keV argon ion beam was investigated with Rutherford backscattering spectrometry and it was found that in layers deposited at close to normal ejection angles the argon trapping was at the level of ≤1 at.%, similar to magnetron-deposited layers, whereas argon incorporation increased with the ejection angle up to several per cent at large angles. Copyright © 2000 John Wiley & Sons, Ltd.
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