Abstract
Rutherford backscattering and forward recoil spectrometry have been used to determine the chemical composition and density of SiO2sol‐gel films. The as‐deposited films are relatively dense, because of considerable interpenetration of weakly branched silicate precursors, while they contain significant amounts of hydroxyl groups in their structure. Annealing in flowing Ar increases the density of the films with values approaching that of amorphous silica at temperatures as low as 450°C but it fails to completely remove all the hydroxyl groups from the structure.
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