Abstract
We report compositional measurements on highly disordered GdN, DyN, ErN and SmN thin films, grown using ion-assisted deposition and capped with GaN AlN and Al, grown using the same technique. Ion beam analysis technique of RBS, PIXE and nuclear reaction analysis (NRA) were used to determine the composition of the capped films ex situ, and show that GaN and AlN protects the GdN, DyN and SmN films from oxidation over a timescale of at least a few days. NRA depth profiles indicate that oxygen is incorporated into the films during deposition and is located at the GaN/GdN interface. The ion beam analysis measurements showed that stoichiometric ratios can be obtained and oxygen impurities are significantly reduced by varying the film deposition parameters. The successful protection of the rare earth (RE) nitride films from oxidation allows for a reliable analysis of the RE films in the as-deposited state.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
