Ion beam analysis of multilayer structures grown with atomic layer epitaxy (ALE)

Abstract

Numerous ion beam analysis techniques, e.g. Rutherford backscattering (RBS), proton induced γ-ray emission (PIGE), nuclear resonance broadening (NRB), proton induced X-ray emission (PIXE), and forward recoiling spectroscopy (FRES) were applied to analyse thin film electroluminescent multilayer structures. These methods are characterized by non-destructive nature, good reproducibility and quantitativity. Good depth resolution is achieved with RBS and NRB, and to a limited extent with FRES, whereas PIGE and PIXE can probe only average concentrations of the surface layer. In general, most elements including hydrogen can be detected with these methods. The analysis of the multilayer structure Al x Ti y O z /ZnS:Mn/Al x Ti y O z grown with atomic layer epitaxy (ALE) revealed a high purity with minor amounts of contaminants such as hydrogen, sodium andd nickel.