Abstract
The etching of both amorphous and single-crystal Si with XeF2 vapor has been investigated by ion backscattering spectrometry. The etching rate of vapor-deposited Si measured both in situ during the etch and after completion of etching indicates a strong dependence on the partial pressure and thus the flow rate of XeF2. Single-crystal (100) Si exhibits almost twice the etching rate of amorphous Si, which can possibly be attributed to a preferred etching direction in single crystals.
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