Abstract

Thin yttria-stabilized zirconia (YSZ) (100) transmission electron microscopy (TEM) samples prepared using 5 kV Ar ion sputtering and subsequent annealing with 5 kV electron beams under ultrahigh vacuum (UHV) environment were observed with TEM. A new phase which is electron conducting and has high electron beam tolerance is formed. The phase grows epitaxially with the YSZ matrix and has a cubic structure. It is estimated that substrate YSZ reacted with surface contaminants to from ZrC during electron beam annealing. When the substrates were thoroughly cleaned before ion beam irradiation, no new phase formation was observed. Instead, formation of faceted holes was identified.

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