Iodine-catalyzed chemical vapor deposition of Cu on MPTMS monolayer surface in a low deposition temperature regime

Abstract

Cu was deposited on a self-assembled monolayer of a 3-mercaptopropyltrimethoxysilane (MPTMS)-coated glass substrate by chemical vapor deposition (CVD) at temperatures ≤ 160 °C using (hfac)Cu(DMB) as a precursor. During deposition, there was an induction period for the Cu metal to nucleate on the MPTMS monolayer. This was attributed to the low mobility of Cu on the MPTMS surface in the low temperature regime as a result of an interfacial interaction between Cu and S. The addition of iodine significantly shortened the induction period, which was attributed to the iodine-aided surface diffusion of Cu. In addition, the iodine addition increased the growth rate, and improved the (111) texture. Moreover, the adsorbed iodine atoms had surfactant effects on promoting lateral growth.