Abstract
Epitaxial growth of ZnSe on GaAs(100) and (111)B substrates is undertaken by hydrogen-transport vapor-phase epitaxial growth method. Growth behaviors under the condition of iodine doping and characteristics of grown ZnSe layers are given. By adding iodine molecules to the reactant agents, the growth rates of ZnSe on both GaAs(100) and (111)B planes are enhanced, which are similar phenomena with the iodine doping effects upon ZnS growth on GaP substrates. As the iodine transport rate increases beyond optimum value, the growth rates of ZnSe decrease in the opposite way. Furthermore, the dependence of the crystallinity of the grown layers on the iodine transport rate is also found to support the changes in the growth rate caused by iodine doping.
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