Abstract
Uncooled lead salt detectors have significant advantages in developing the next generation of infrared detectors with SWaP3 features. Herein, a one-step pure nitrogen (N2) sensitized process is proposed to simplify the fabrication process for a wafer-scale lead sulfide (PbS) film fabricated by a modified low-temperature vapor physical deposition (VPD). A room-temperature peak detectivity of 4 × 1010 Jones is achieved after one-step pure N2 sensitization process carried out for VPD-PbS:IO films, which is comparable to the detectors fabricated from the standard chemical bath deposition (CBD) process. The VPD fabrication technology with an iodine-free sensitization process provides an available route for promoting the commercial application of uncooled infrared detectors.
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