Abstract
Performance of InxGa1−xN photo-electrodes at concentrations of In ranging from 0 to 100 % was investigated in basic and acidic solutions under 1 Sun illumination. Photocorrosive effects of InxGa1−xN samples in aqueous solutions are revealed and strategies for a more efficient use of these electrodes are discussed. Formation of Ga2O3 phase and N2 under photoanodic conditions can explain the photo-corrosive effect. It is shown that the product of charge carrier density and mobility, n×μ, scales with the photo-current density in GaN.
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