Abstract
High-quality In0.22Ga0.78N/In0.06Ga0.94N superlattices were grown on GaN films with periods of 60 and 200 Å by the two-flow metalorganic chemical-vapor deposition method. The double-crystal x-ray rocking curve measurements showed satellite peaks which indicated the existence of the In0.22Ga0.78N/In0.06Ga0.94N superlattices. The quantum effects were observed through room-temperature photoluminescence (PL) measurements. These PL spectra were compared to theoretical solutions for the In0.22Ga0.78N/In0.06Ga0.94N superlattices.
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