Abstract
Wide bandgap (WBG) semiconductor devices based on SiC, GaN and Ga2O3 provide advantages for many strategic initiatives in various industrial sectors, such as data centers, electric vehicles, renewable energy systems like solar and wind power inverters. Here we provide an overview of our ongoing WBG semiconductor related research/development and innovation activities, especially on GaN based devices owing to their rapid/huge demanding in the emerging green technology market nowadays. In particular, the innovative GaN material epi growth, the device processing/packaging and related characterization/verification are elaborated.
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